2N3716
Trans GP BJT NPN 80V 10A 150000mW 3-Pin(2+Tab) TO-3 Sleeve
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $146.137 | $146.14 |
200 | $58.310 | $11,662.00 |
500 | $56.361 | $28,180.50 |
1000 | $55.399 | $55,399.00 |
Inventory:4,695
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Part Number : 2N3716
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Package/Case : TO-3
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Brands : MICROCHIP
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Components Categories : Bipolar (BJT)Single Bipolar Transistors
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Datesheet : 2N3716 DataSheet (PDF)
The 2N3716 is a silicon NPN power transistor designed for general-purpose switching and amplification applications. This transistor offers high current capability and low saturation voltage, making it suitable for various electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram illustrating the connections and operation of the 2N3716 transistor for a visual representation. Note: For detailed technical specifications, please refer to the 2N3716 datasheet. Functionality The 2N3716 is a versatile silicon NPN power transistor that offers high current capability and low saturation voltage. It is well-suited for both switching and amplification applications in electronic circuits. Usage Guide Q: What is the maximum collector current rating of the 2N3716? Q: Can the 2N3716 withstand high temperatures? For similar functionalities, consider these alternatives to the 2N3716:Overview of 2N3716
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The maximum collector current (IC) rating of the 2N3716 is typically specified in the datasheet and varies depending on operating conditions.
A: Yes, the 2N3716 is designed to operate over a wide temperature range and can withstand high temperatures encountered in various electronic applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Category | Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors | Mfr | Central Semiconductor Corp |
Series | - | Package | Tube |
Product Status | Obsolete | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 10 A | Voltage - Collector Emitter Breakdown (Max) | 80 V |
Vce Saturation (Max) @ Ib, Ic | 800mV @ 500mA, 5A | Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 2V | Power - Max | 150 W |
Frequency - Transition | 4MHz | Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
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