2N3766
Bipolar Transistors - BJT Power BJT
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $71.943 | $71.94 |
200 | $27.841 | $5,568.20 |
500 | $26.863 | $13,431.50 |
1000 | $26.379 | $26,379.00 |
Inventory:9,556
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Part Number : 2N3766
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Package/Case : TO-66-2
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Brands : MICROCHIP
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Components Categories : Bipolar Transistors - BJT
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Datesheet : 2N3766 DataSheet (PDF)
The 2N3766 is a high-power NPN transistor designed for general-purpose amplifier and switching applications. This transistor features a high current and voltage ratings, making it suitable for various electronic projects. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the usage of the 2N3766 transistor in amplifier or switching circuits for better understanding. Note: For detailed technical specifications, please refer to the 2N3766 datasheet. Functionality The 2N3766 transistor is designed to amplify and switch electronic signals with high power requirements. It provides reliable performance in various electronic applications. Usage Guide Q: Can the 2N3766 be used in high-frequency applications? For similar functionalities, consider these alternatives to the 2N3766:Overview of 2N3766
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The 2N3766 is primarily designed for medium-power applications and may not be suitable for high-frequency operations. Consider specialized transistors for high-frequency requirements.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Microchip | Product Category | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-66-2 | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 60 V |
Collector- Base Voltage VCBO | 80 V | Emitter- Base Voltage VEBO | 6 V |
Collector-Emitter Saturation Voltage | 2.5 V | Maximum DC Collector Current | 4 A |
Pd - Power Dissipation | 25 W | Gain Bandwidth Product fT | - |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Microchip Technology | Continuous Collector Current | 4 A |
DC Collector/Base Gain hfe Min | 20 | DC Current Gain hFE Max | 160 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Technology | Si |
Unit Weight | 0.338401 oz |
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