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2N3810U

Bipolar Transistors - BJT Dual Small-Signal BJT

Inventory:8,219

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Overview of 2N3810U

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar Transistor Arrays Mfr Microchip Technology
Series - Package Bulk
Product Status Active Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V Power - Max 350mW
Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole Package / Case TO-78-6 Metal Can
Supplier Device Package TO-78-6 Base Product Number 2N3810

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