• ZXMN7A11GTA
ZXMN7A11GTA

ZXMN7A11GTA

Trans MOSFET N-CH 70V 2.7A 4-Pin(3+Tab) SOT-223 T/R

Inventory:4,107

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Overview of ZXMN7A11GTA

N-Channel 70 V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223-3

ZXMN7A11GTA

Key Features

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

Application

SWITCHING
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Transferred
Ihs Manufacturer ZETEX PLC Package Description SOT-223, 4-PIN
Reach Compliance Code not_compliant ECCN Code EAR99
Additional Feature LOW THRESHOLD; FAST SWITCHING Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 70 V
Drain Current-Max (ID) 3.8 A Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Diodes Incorporated Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 70 V Id - Continuous Drain Current 3.8 A
Rds On - Drain-Source Resistance 130 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 7.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3.9 W Channel Mode Enhancement
Series ZXMN7A11 Brand Diodes Incorporated
Fall Time 5.8 ns Height 1.65 mm
Length 6.7 mm Product Type MOSFET
Rise Time 2 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 11.5 ns Typical Turn-On Delay Time 1.9 ns
Width 3.7 mm Unit Weight 0.003951 oz

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