ZXMHC10A07T8TA
MOSFET 100V 1.4A N-Channel MOSFET H-Bridge
Inventory:5,282
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Part Number : ZXMHC10A07T8TA
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Package/Case : SM8
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Brands : DIODES
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Components Categories : FETs, MOSFETsFET, MOSFET Arrays
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Datesheet : ZXMHC10A07T8TA DataSheet (PDF)
Overview of ZXMHC10A07T8TA
Mosfet Array 100V 1A, 800mA 1.3W Surface Mount SM8
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Transferred |
Ihs Manufacturer | ZETEX PLC | Package Description | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 1 A | Drain-source On Resistance-Max | 0.7 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 4 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | Matte Tin (Sn) | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 40 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Manufacturer | Diodes Incorporated | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SM-8 |
Transistor Polarity | N-Channel, P-Channel | Number of Channels | 4 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 1.1 A |
Rds On - Drain-Source Resistance | 700 mOhms, 1 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 2.9 nC, 3.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1.3 W | Channel Mode | Enhancement |
Series | ZXMHC10 | Brand | Diodes Incorporated |
Fall Time | 2.1 ns, 3.3 ns | Forward Transconductance - Min | 1.6 S, 1.2 S |
Height | 1.6 mm | Length | 6.7 mm |
Product | MOSFET Small Signal | Product Type | MOSFET |
Rise Time | 1.5 ns, 2.1 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel, 2 P-Channel |
Typical Turn-Off Delay Time | 4.1 ns, 5.9 ns | Typical Turn-On Delay Time | 1.8 ns, 1.6 ns |
Width | 3.7 mm | Unit Weight | 4.127054 oz |
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