ZXMN4A06GTA
MOSFET 40V N-Chnl UMOS
Inventory:7,843
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Part Number : ZXMN4A06GTA
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Package/Case : SOT223-4
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : ZXMN4A06GTA DataSheet (PDF)
Overview of ZXMN4A06GTA
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 3.9W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Current Id Max: 7A; Current Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; On State Resistance Max: 50mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 3.9W; Pulse Current Idm: 22A; SMD Marking: ZXMN 4A06; Termination Type: Surface Mount Device; Voltage Vds Typ: 40V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
Key Features
- Low on-resistance
- Fast switching speed
- Low threshold
- Low gate drive
- SOT223 package
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-223-4 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 7 A |
Rds On - Drain-Source Resistance | 50 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 18.2 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 3.9 W | Channel Mode | Enhancement |
Series | ZXMN4A | Brand | Diodes Incorporated |
Configuration | Single | Fall Time | 7.35 ns |
Forward Transconductance - Min | 8.7 S | Height | 1.65 mm |
Length | 6.7 mm | Product Type | MOSFET |
Rise Time | 4.45 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 28.61 ns |
Typical Turn-On Delay Time | 2.55 ns | Width | 3.7 mm |
Unit Weight | 0.003951 oz |
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Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
Returns for Exchange: within 90 days
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