W29GL128CH9T

FLASH - NOR Memory IC 128Mbit Parallel 90 ns 56-TSOP

Key Features

• 64k-Word/128k-Byte uniform sector architecture
• – Total 128 uniform sectors
• 32-Word/64-Byte write buffer
• – Reduces total program time for multiple-word updates
• 8-Word/16-Byte page read buffer
• Secured Silicon Sector area
• – Programmed and locked by the customer or during production
• – 128-word/256-byte sector for permanent, safe identification using an 8-word/16-byte random electronic serial number
• Enhanced Sector Protect using Dynamic and Individual mechanisms
• Polling/Toggling methods are used to detect the status of program and erase operation
• Suspend and resume commands used for program and erase operations
• More than 100,000 erase/program cycles
• More than 20-year data retention
• Software and Hardware write protection
• – Write-Protect all or a portion of memory
• – Enable/Disable protection with #WP pin
• – Top or bottom array protection
• Low power consumption
• Deep power down mode
• Wide temperature range
• Compatible manufacturer ID for drop-in replacement
• – No firmware change is required
• Faster Erase and Program time
• – Erase is 1.5x faster than industry standard
• – Program is 2x faster than industry standard
• – Allows for improved production throughput and faster field updates
• CFI (Common Flash Interface) support
• Single 3V Read/Program/Erase (2.7 - 3.6V)
• Enhanced Variable IO control
• – All input levels (address, control, and DQ) and output levels are determined by voltage on the EVIO input. EVIO ranges from 1.65 to VCC
• #WP/ACC Input
• – Accelerates programming time (when VHH is applied) for greater throughput during system production
• – Protects first or last sector regardless of sector protection settings
• Hardware reset input (#reset) resets device
• Ready/#Busy output (RY/#BY) detects completion of program or erase cycle
• Packages
• – 56-pin TSOP
• – 56-ball TFBGA
• – 64-ball LFBGA