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VN2410L-G

Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag

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Overview of VN2410L-G

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid VN2410L-G Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description CYLINDRICAL, O-PBCY-T3 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 17 Weeks, 4 Days Samacsys Manufacturer Microchip
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 240 V
Drain Current-Max (ID) 0.19 A Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 20 pF
JEDEC-95 Code TO-92 JESD-30 Code O-PBCY-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape ROUND
Package Style CYLINDRICAL Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON

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