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VN2210N2

Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag

Quantity Unit Price(USD) Ext. Price
1 $15.058 $15.06
200 $5.827 $1,165.40
500 $5.623 $2,811.50
1000 $5.521 $5,521.00

Inventory:5,048

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for VN2210N2 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of VN2210N2

VN2210 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

    • Free from secondary breakdown
    • Low power drive requirement
    • Ease of paralleling
    • Low CISS and fast switching speeds
    • Excellent thermal stability
    • Integral source-drain diode
    • High input impedance and high gain

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid VN2210N2 Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TO-39, 3 PIN Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 10 Weeks Samacsys Manufacturer Microchip
Additional Feature HIGH INPUT IMPEDANCE Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.7 A Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 65 pF
JEDEC-95 Code TO-39 JESD-30 Code O-MBCY-W3
JESD-609 Code e4 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material METAL Package Shape ROUND
Package Style CYLINDRICAL Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish NICKEL GOLD
Terminal Form WIRE Terminal Position BOTTOM
Transistor Application SWITCHING Transistor Element Material SILICON

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    Returns for refund: within 90 days

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