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STF14N80K5

Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $2.492 $2.49
10 $2.141 $21.41
50 $1.920 $96.00
100 $1.693 $169.30
500 $1.591 $795.50
1000 $1.546 $1,546.00

Inventory:3,699

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for STF14N80K5 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of STF14N80K5

The STF14N80K5 product offers unparalleled performance in high voltage applications with its advanced MDmesh™ K5 technology. By utilizing a unique vertical structure design, this N-channel Power MOSFET achieves an impressive reduction in on-resistance and gate charge, setting a new standard for power density and efficiency. Engineers and designers will appreciate the innovative features of this product, making it ideal for demanding applications where performance is paramount

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF14N80K5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 270 mJ
Case Connection ISOLATED Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.445 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.8 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 48 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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