STFW4N150
Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3PF Tube
Inventory:7,281
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Part Number : STFW4N150
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Package/Case : TO-3PF
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Brands : ST
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : STFW4N150 DataSheet (PDF)
The STFW4N150 is an N-channel power MOSFET designed for high-power switching applications.This MOSFET features a low on-resistance and high current-handling capability,making it ideal for use in power supplies,motor control,and other high-power electronic circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STFW4N150 MOSFET for a visual representation. Note:For detailed technical specifications,please refer to the STFW4N150 datasheet. Functionality The STFW4N150 is a high-power N-channel MOSFET that enables efficient power switching in applications requiring high current handling and low on-resistance.It ensures reliable performance in demanding electronic circuits. Usage Guide Q:Can the STFW4N150 be used in automotive applications? For similar functionalities,consider these alternatives to the STFW4N150:Overview of STFW4N150
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:Yes,the STFW4N150 is suitable for automotive applications requiring high-power switching capabilities.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STFW4N150 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-3PF |
Package Description | ROHS COMPLIANT, PLASTIC, TO-3PF, 3 PIN | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 50 Weeks | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 350 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 1500 V |
Drain Current-Max (Abs) (ID) | 2.5 A | Drain Current-Max (ID) | 4 A |
Drain-source On Resistance-Max | 7 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 12 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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