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SPP80N06S2-05

Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220

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Overview of SPP80N06S2-05

The SPP80N06S2-05 is a power MOSFET transistor designed for high-power switching applications. This N-channel MOSFET features a low on-state resistance and high current capability, making it suitable for applications requiring efficient power handling.

Pinout

(Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the switching operation
  • DRAIN: Power input terminal
  • SOURCE: Ground terminal
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SPP80N06S2-05 MOSFET for a visual representation.

Key Features

  • High Power Handling: The SPP80N06S2-05 can handle high power levels, making it suitable for power switching applications.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power loss and heat generation during operation.
  • Fast Switching Speed: The SPP80N06S2-05 offers fast switching characteristics, allowing for efficient power control.
  • High Current Capability: This MOSFET can handle significant current levels, making it suitable for high-power circuits.
  • Enhanced Thermal Performance: The package design and thermal characteristics of the SPP80N06S2-05 ensure reliable operation under varying temperature conditions.

Note: For detailed technical specifications, please refer to the SPP80N06S2-05 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power management.
  • Motor Control: Suitable for motor control applications requiring high current handling capabilities.
  • Inverters: Used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The SPP80N06S2-05 power MOSFET transistor is designed to efficiently switch high power loads in applications such as power supplies, motor control, and inverters. It provides reliable performance and effective power handling capabilities.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE terminal for controlling the switching operation.
  • Power Connections: Connect the DRAIN terminal to the power input and the SOURCE terminal to the ground.
  • Heat Dissipation: Ensure proper heat sinking or thermal management to maintain optimal operating temperature.

Frequently Asked Questions

Q: Is the SPP80N06S2-05 suitable for automotive applications?
A: Yes, the SPP80N06S2-05 is designed for high-power applications and can be used in automotive systems requiring efficient power management.

Equivalent

For similar functionalities, consider these alternatives to the SPP80N06S2-05:

  • IRF840: A power MOSFET with comparable specifications and performance characteristics.
  • FDP8878: This MOSFET offers similar power handling capabilities and low on-state resistance for efficient power control.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 5.1 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 20 ns Height 15.65 mm
Length 10 mm Product Type MOSFET
Rise Time 21 ns Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 54 ns
Typical Turn-On Delay Time 18 ns Width 4.4 mm
Unit Weight 0.068784 oz

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