SPP80N06S2-05
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220
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Part Number : SPP80N06S2-05
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Package/Case : TO220-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : SPP80N06S2-05 DataSheet (PDF)
The SPP80N06S2-05 is a power MOSFET transistor designed for high-power switching applications. This N-channel MOSFET features a low on-state resistance and high current capability, making it suitable for applications requiring efficient power handling. (Note: The pin configuration below is a general representation. Please refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the SPP80N06S2-05 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the SPP80N06S2-05 datasheet. Functionality The SPP80N06S2-05 power MOSFET transistor is designed to efficiently switch high power loads in applications such as power supplies, motor control, and inverters. It provides reliable performance and effective power handling capabilities. Usage Guide Q: Is the SPP80N06S2-05 suitable for automotive applications? For similar functionalities, consider these alternatives to the SPP80N06S2-05:Overview of SPP80N06S2-05
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the SPP80N06S2-05 is designed for high-power applications and can be used in automotive systems requiring efficient power management.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-220-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 55 V | Id - Continuous Drain Current | 80 A |
Rds On - Drain-Source Resistance | 5.1 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 300 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 20 ns | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Rise Time | 21 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 54 ns |
Typical Turn-On Delay Time | 18 ns | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
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