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RF4C050APTR

Pch -20V -10A Middle Power MOSFET

Inventory:8,325

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Overview of RF4C050APTR

Power Field-Effect Transistor, 10A I(D), 20V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HUML2020L8, 6 PIN

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 26mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 4.5 V Vgs (Max) -8V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V Power Dissipation (Max) 2W (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package HUML2020L8 Package / Case DFN-2020-8
Base Product Number RF4C050 Manufacturer ROHM Semiconductor
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 10 A
Rds On - Drain-Source Resistance 65 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 300 mV Qg - Gate Charge 55 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Series RF4C050AP Brand ROHM Semiconductor
Configuration Single Fall Time 160 ns
Forward Transconductance - Min 8 S Height 0.65 mm
Length 2.1 mm Product MOSFETs
Product Type MOSFET Rise Time 16 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Type Power MOSFET
Typical Turn-Off Delay Time 580 ns Typical Turn-On Delay Time 16 ns
Width 2.1 mm Part # Aliases RF4C050AP
Unit Weight 0.196723 oz

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