• EMG8T2R EMT5
EMG8T2R EMT5

EMG8T2R

Trans Digital BJT NPN 50V 100mA 150mW 5-Pin EMT T/R

Quantity Unit Price(USD) Ext. Price
5 $0.071 $0.36
50 $0.057 $2.85
150 $0.049 $7.35
500 $0.045 $22.50
2500 $0.041 $102.50
5000 $0.039 $195.00

Inventory:6,427

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for EMG8T2R or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of EMG8T2R

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5

EMG8T2R

Key Features

  • 1) Built-In Biasing Resistors.
  • 2) Two DTC143Z chips in one package.
  • 3) Emitter(GND)-common type.
  • 4) Built-in bias resistors enable the configuration of
  • an inverter circuit without connecting external
  • input resistors (see inner circuit).
  • 5) The bias resistors consist of thin-film resistors
  • with complete isolation to allow negative biasing
  • of the input. They also have the advantage of
  • completely eliminating parasitic effects.
  • 6) Only the on/off conditions need to be set for
  • operation, making the circuit design easy.
  • 7) Lead Free/RoHS Compliant.

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer ROHM CO LTD
Part Package Code SC-107 Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 5 Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer ROHM Semiconductor Additional Feature BUILT IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.1 A Collector-Emitter Voltage-Max 50 V
Configuration COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-F5 JESD-609 Code e2
Moisture Sensitivity Level 1 Number of Elements 2
Number of Terminals 5 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN COPPER Terminal Form FLAT
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

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