• MAT01AHZ TO78-6
MAT01AHZ TO78-6

MAT01AHZ

Trans GP BJT NPN 45V 0.025A 1800mW 6-Pin TO-78 Tube

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  • Part Number : MAT01AHZ

  • Package/Case : TO78-6

  • Brands : ADI

  • Components Categories : Bipolar (BJT)Bipolar Transistor Arrays

  • Datesheet : MAT01AHZ DataSheet (PDF)

Quick Inquiry

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Overview of MAT01AHZ

The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matchingcharacteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.

MAT01AHZ

Key Features

  • Low VOS (VBE match): 40 μV typical, 100 μV maximum
  • Low TCVOS: 0.5 μV/°C maximum
  • High hFE: 500 minimum

Application

  • Weigh scales
  • Low noise, op amp, front end
  • Current mirror and current sink/source
  • Low noise instrumentation amplifiers
  • Voltage controlled attenuators
  • Log amplifiers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-78-6
Transistor Polarity NPN Configuration Dual
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 45 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 800 mV
Maximum DC Collector Current 25 mA Pd - Power Dissipation 500 mW
Gain Bandwidth Product fT 450 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C Series MAT01
Brand Analog Devices Continuous Collector Current 25 mA
DC Collector/Base Gain hfe Min 500 DC Current Gain hFE Max 840
Height 4.7 mm Length 9.4 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 100
Subcategory Transistors Technology Si
Width 9.4 mm Unit Weight 0.156210 oz

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