• LM74800QDRRRQ1 WSON-12
LM74800QDRRRQ1 WSON-12

LM74800QDRRRQ1

LM7480x Q1 Ideal Diode Controller with Load Dump Protection

Quantity Unit Price(USD) Ext. Price
1 $2.032 $2.03
10 $1.754 $17.54
30 $1.582 $47.46
100 $1.404 $140.40
500 $1.324 $662.00
1000 $1.290 $1,290.00

Inventory:8,948

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for LM74800QDRRRQ1 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of LM74800QDRRRQ1

The LM7480x-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and overvoltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and overvoltage protection using HGATE control. The device features an adjustable overvoltage cut-off protection feature. LM7480-Q1 has two variants, LM74800-Q1 and LM74801-Q1. LM74800-Q1 employs reverse current blocking using linear regulation and comparator scheme vs. LM74801-Q1 which supports comparator based scheme. With Common Drain configuration of the power MOSFETs, the mid-point can be utilized for OR-ing designs using an another ideal diode. The LM7480x-Q1 has a maximum voltage rating of 65 V. The loads can be protected from extended overvoltage transients like 200-V Unsuppressed Load Dumps in 24-V Battery systems by configuring the device with external MOSFETs in Common Source topology.

LM74800QDRRRQ1

Key Features

  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back-to-back N-Channel MOSFETs in common drain and common source configurations
  • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation (LM74800-Q1)
  • Low reverse detection threshold (–4.5 mV) with fast response (0.5 µs)
  • 20-mA peak gate (DGATE) turnon current
  • 2.6-A peak DGATE turnoff current
  • Adjustable overvoltage protection
  • Low 2.87-µA shutdown current (EN/UVLO=Low)
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-Pin WSON package

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Vin (min) (V) 3 Vin (max) (V) 65
Number of channels 2 Features Automotive load dump compatibility, Inrush current control, Linear control, Overvoltage protection, Reverse current blocking, Reverse polarity protection
Iq (typ) (mA) 0.412 Iq (max) (mA) 0.495
FET External back-to-back FET IGate source (typ) (µA) 20000
IGate sink (typ) (mA) 2670 IGate pulsed (typ) (A) 2.6
Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -4.5
Design support EVM, Simulation Model Rating Automotive
Imax (A) 300 VGS (max) (V) 15
Shutdown current (ISD) (mA) (A) 0.003 Device type Ideal diode controller
Product type Ideal diode controller

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