• LM74610QDGKRQ1 VSSOP-8
LM74610QDGKRQ1 VSSOP-8

LM74610QDGKRQ1

OR Controller N-Channel Single Automotive AEC-Q100 8-Pin VSSOP T/R

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Overview of LM74610QDGKRQ1

The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

LM74610QDGKRQ1

Key Features

  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Exceeds HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Maximum reverse voltage of 45 V
  • No Positive Voltage limitation to Anode Terminal
  • Charge Pump Gate Driver for External N-Channel
    MOSFET
  • Lower Power Dissipation than Schottky
    Diode/PFET Solutions
  • Low Reverse Leakage Current
  • Zero IQ
  • Fast 2-µs Response to Reverse Polarity
  • –40°C to +125°C Operating Ambient Temperature
  • Can be Used in OR-ing Applications
  • Meets CISPR25 EMI Specification
  • Meets Automotive ISO7637 Transient
    Requirements with a Suitable TVS Diode
  • No Peak Current Limit

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Vin (min) (V) 0.48 Vin (max) (V) 42
Number of channels 1 Features Automotive load dump compatibility, Linear control, Reverse current blocking, Reverse polarity protection
Iq (typ) (mA) 0 Iq (max) (mA) 0
FET External single FET IGate source (typ) (µA) 10
IGate source (max) (µA) 9.4 IGate sink (typ) (mA) 0.01
IGate pulsed (typ) (A) 0.1 Operating temperature range (°C) -40 to 125
IReverse (typ) (µA) 110 VSense reverse (typ) (mV) 20
Design support EVM Rating Automotive
Imax (A) 1.5 VGS (max) (V) 2.5
Device type Ideal diode controller Product type Ideal diode controller

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