IXKR25N80C
Trans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 247
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $20.303 | $20.30 |
| 200 | $7.858 | $1,571.60 |
| 500 | $7.581 | $3,790.50 |
| 1000 | $7.444 | $7,444.00 |
Inventory:4,268
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : IXKR25N80C
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Package/Case : TO-247-3
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Brands : IXYS
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IXKR25N80C DataSheet (PDF)
Overview of IXKR25N80C
These Power MOSFETs based on Super Junction technologyfeature the lowest RDS(on)in 600V-800V classMOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation.
Key Features
- Silicon chip on Direct-Copper-Bond substrate
- 3rd generation CoolMOS™
- (1)
- power MOSFET
- Enhanced total power density
- Low thermal resistance
Application
- Switch mode power supplies
- Uninterruptible power supplies
- Power factor correction (PFC)
- Welding
- Inductive heating
- Advantages:
- Easy assembly
- Space savings
- High power density
- (1)
- CoolMOS™ is a trademark ofInfineon Technologies AG.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | LITTELFUSE INC | Package Description | IN-LINE, R-PSIP-T3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Samacsys Manufacturer | LITTELFUSE | Avalanche Energy Rating (Eas) | 670 mJ |
| Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 800 V | Drain Current-Max (Abs) (ID) | 25 A |
| Drain Current-Max (ID) | 25 A | Drain-source On Resistance-Max | 0.15 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSIP-T3 |
| JESD-609 Code | e1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified | Surface Mount | NO |
| Terminal Finish | TIN SILVER COPPER | Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 10 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Shipping and Package
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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