IXFX26N90
MOSFET 26 Amps 900V 0.3 Rds
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $21.840 | $21.84 |
200 | $8.453 | $1,690.60 |
500 | $8.156 | $4,078.00 |
1000 | $8.008 | $8,008.00 |
Inventory:8,348
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Part Number : IXFX26N90
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Package/Case : TO-247-3Variant
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXFX26N90 DataSheet (PDF)
The IXFX26N90 is a power MOSFET transistor designed for high-performance applications in power supply, motor control, and other high-current electronics. This MOSFET features a voltage rating of 900V and a current rating of 26A, making it suitable for demanding power applications that require efficient switching and low conduction losses. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the implementation of the IXFX26N90 MOSFET in a typical application circuit for better understanding. Note: For detailed technical specifications, please consult the IXFX26N90 datasheet. Functionality The IXFX26N90 power MOSFET is designed to provide efficient high-power switching capabilities in various electronic applications. It offers reliable performance and high efficiency in handling significant power loads. Usage Guide Q: What is the maximum voltage rating of the IXFX26N90? Q: Can the IXFX26N90 be used in motor control applications? For similar functionalities, consider these alternatives to the IXFX26N90:Overview of IXFX26N90
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IXFX26N90 has a maximum voltage rating of 900V, suitable for high-voltage applications.
A: Yes, the IXFX26N90 is well-suited for motor control applications requiring high current handling capabilities and efficient switching.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HiPerFET™ | Package | Tube |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 900 V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V | Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V | Power Dissipation (Max) | 560W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 | Package / Case | TO-247-3 Variant |
Base Product Number | IXFX26 |
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