IXFA56N30X3

With the IXFA56N30X3 MOSFETs, we have redefined what it means to achieve exceptional power conversion efficiency. Through the use of cutting-edge charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs have set a new standard in the industry. Boasting the best-in-class Figure of Merit, these MOSFETs offer unparalleled on-resistance times gate charge, resulting in minimal conduction and switching losses. Their advanced body diodes ensure efficient removal of leftover energies during high-speed switching, mitigating the risk of device failure and maximizing system efficiency. Additionally, their avalanche capability and superior dv/dt performance make them highly resilient against voltage spikes and parasitic bipolar transistors, reducing the need for additional snubbers and enabling seamless integration in various power converters

Key Features

• Lowest on-resistance R
• DS(ON)
• and gate charge Q
• g
• Fast soft recovery body diode
• dv/dt ruggedness
• Superior avalanche capability
• International standard packages

Application

• Battery chargers for light electric vehicles
• Synchronous rectification in switching
• power supplies
• Motor control
• DC-DC converters
• Uninterruptible power supplies
• Electric forklifts
• Class-D audio amplifiers
• Telecom systems