HP8M51TB1

Name: HP8M51TB1
Brand: Rohm Semiconductor
Rating: 4.5 (10 reviews)

MOSFET HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application.

Inventory:6,180

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Mosfet Array 100V 4.5A (Ta) 3W (Ta) Surface Mount 8-HSOP

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status	Active	Technology	Si
Configuration	Dual	Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)	Rds On (Max) @ Id, Vgs	170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V, 26.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 50V, 1430pF @ 50V	Power - Max	3W (Ta)
Operating Temperature	150°C (TJ)	Mounting Type	Surface Mount
Package / Case	HSOP-8	Supplier Device Package	8-HSOP
Base Product Number	HP8M51	Manufacturer	ROHM Semiconductor
Product Category	MOSFET	RoHS	Details
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel, P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	4.5 A	Rds On - Drain-Source Resistance	170 mOhms, 290 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	15 nC, 26.2 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	7 W
Channel Mode	Enhancement	Brand	ROHM Semiconductor
Fall Time	14 ns, 19 ns	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time	50 ns, 75 ns	Typical Turn-On Delay Time	13 ns, 15 ns
Part # Aliases	HP8M51	Unit Weight	0.027197 oz

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