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GT40T301

IGBT Transistors

Inventory:6,089

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Quick Inquiry

Please submit RFQ for GT40T301 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of GT40T301

Parallel Resonance Inverter Switching Applications• FRD included between emitter and collector• Enhancement-mode• High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)

Key Features

HIGH SPEED

Application

POWER CONTROL
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid GT40T301 Rohs Code No
Part Life Cycle Code Obsolete Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer Toshiba Additional Feature HIGH SPEED
Case Connection COLLECTOR Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 1500 V Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 400 ns Gate-Emitter Voltage-Max 25 V
JESD-30 Code R-PSFM-T3 JESD-609 Code e0
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb) Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 450 ns

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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