• 2SC2712-Y SOT23-3
2SC2712-Y SOT23-3

2SC2712-Y

Trans GP BJT NPN 50V 0.15A 150mW Automotive 3-Pin S-Mini

Quantity Unit Price(USD) Ext. Price
50 $0.012 $0.60
500 $0.010 $5.00
3000 $0.009 $27.00
6000 $0.008 $48.00
24000 $0.008 $192.00
51000 $0.008 $408.00

Inventory:5,925

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for 2SC2712-Y or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2SC2712-Y

AUDIO FREQUENCY AMPLIFIER NPN TRANSISTORFEATURES* High Voltage and High Current: VCEO=50V, IC=150mA (Max.)* Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)* High hFE* Low Noise

2SC2712-Y

Key Features

  • High Voltage and High Current: VCEO=50V, IC=150mA (Max.)
  • Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)
  • High hFE
  • Low Noise

Application

AMPLIFIER
Toshiba Semiconductor And Storage Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 50 V
Collector- Base Voltage VCBO 60 V Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 250 mV Maximum DC Collector Current 150 mA
Pd - Power Dissipation 150 mW Gain Bandwidth Product fT 80 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 125 C
Series 2SC2712 Brand Toshiba
Continuous Collector Current 150 mA DC Collector/Base Gain hfe Min 70
DC Current Gain hFE Max 700 Height 1.1 mm
Length 2.9 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Width 1.5 mm

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