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GT40RR21

IGBT Transistors

Inventory:9,571

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Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Toshiba Product Category IGBT Transistors
Technology Si Package / Case TO-3PN-3
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.35 kV Collector-Emitter Saturation Voltage 1.6 V
Maximum Gate Emitter Voltage - 25 V, 25 V Continuous Collector Current at 25 C 40 A
Pd - Power Dissipation 230 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Series GT40RR21
Brand Toshiba Continuous Collector Current Ic Max 200 A
Gate-Emitter Leakage Current 100 nA Product Type IGBT Transistors
Subcategory IGBTs

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