• TPW1R306PL,L1Q DSOP-8
TPW1R306PL,L1Q DSOP-8

TPW1R306PL,L1Q

Trans MOSFET N-CH Si 60V 260A 8-Pin DSOP Advance

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Overview of TPW1R306PL,L1Q

The TPW1R306PL,L1Q is a high-performance RF transistor designed for use in RF amplifier circuits and power amplification applications. This transistor offers high power gain and efficiency, making it suitable for various radio frequency applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter
  • Base
  • Collector


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TPW1R306PL,L1Q RF transistor for a visual representation.

Key Features

  • High Power Gain: The TPW1R306PL,L1Q offers high power gain, enhancing signal amplification in RF circuits.
  • Efficiency: This transistor provides high efficiency in power amplification, maximizing output power while minimizing energy consumption.
  • Wide Frequency Range: With a wide frequency range, the TPW1R306PL,L1Q is versatile and can be used in various RF applications.

Note: For detailed technical specifications, please refer to the TPW1R306PL,L1Q datasheet.

Application

  • RF Amplification: Ideal for RF amplifier circuits requiring high power gain and efficiency.
  • Power Amplification: Suitable for power amplification applications in radio frequency systems.
  • RF Communication: Used in RF communication systems for signal amplification.

Functionality

The TPW1R306PL,L1Q RF transistor offers high power gain and efficiency, making it a reliable component for RF and power amplification applications.

Usage Guide

  • Connection: Connect the emitter, base, and collector pins to the corresponding terminals in the circuit for proper amplification.
  • Biasing: Apply appropriate biasing to ensure optimal performance of the RF transistor.

Frequently Asked Questions

Q: Is the TPW1R306PL,L1Q suitable for high-frequency applications?
A: Yes, the TPW1R306PL,L1Q is designed for high-frequency operations and offers reliable performance in such applications.

Q: What is the power handling capability of the TPW1R306PL,L1Q?
A: The TPW1R306PL,L1Q can handle high power levels, making it suitable for power amplification tasks.

Equivalent

For similar functionalities, consider these alternatives to the TPW1R306PL,L1Q:

  • TPW1R308PL,L1Q: This RF transistor offers similar performance characteristics with slight variations in specifications.
  • TPW1R305PL,L1Q: A comparable RF transistor with features that meet the requirements of RF amplification systems.

TPW1R306PL,L1Q

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.29mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8100 pF @ 30 V FET Feature -
Power Dissipation (Max) 960mW (Ta), 170W (Tc) Operating Temperature 175°C
Mounting Type Surface Mount Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN Base Product Number TPW1R306

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