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FJ3303010L

FJ3303010L, P-channel MOSFET Transistor, -0.1 A -30 V Depletion, 3-Pin SSSMini3 F2 B

Inventory:8,255

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Overview of FJ3303010L

Manufactured using Silicon Metal-oxide Semiconductor technology, this transistor features a single element design for simplified circuit integration. The HALOGEN FREE AND ROHS COMPLIANT construction ensures environmental friendliness and compliance with international regulations regarding hazardous substances

Key Features

Low drain-source ON resistance: RDS(on) typ. = 4(VGS = -4.0 V)

High-speed switching

Small size surface mounting package: SSSMini3-F2-B

Contributes to miniaturization of sets, reduction of component count.

Eco-friendly Halogen-free package

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tape & Reel (TR) Product Status Obsolete
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 7Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 1µA Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 12 pF @ 3 V Power Dissipation (Max) 100mW (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SSSMini3-F2-B Package / Case SOT-723

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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