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FDS8960C

MOSFET 35V Dual N & P-Chl PwrTrnch #174 MOSFET

Inventory:8,430

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Please submit RFQ for FDS8960C or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDS8960C

The FDS8960C is a power MOSFET transistor that stands out for its impressive specifications. Its high voltage capabilities and ability to handle large currents make it an ideal choice for applications requiring efficient power delivery

Key Features

  • Q1: N-Channel
    7.0 A, 35 V
    RDS(ON) = 24 mΩ @ VGS = 10 V
    RDS(ON) = 32 mΩ @ VGS = 4.5 V
  • Q2: P-Channel
    -5 A, -35 V
    RDS(ON) = 53 mΩ @ VGS = -10 V
    RDS(ON) = 87 mΩ @ VGS = -4.5 V
  • Fast switching speed
  • RoHS compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series PowerTrench® Product Status Obsolete
Technology MOSFET (Metal Oxide) Configuration N and P-Channel
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 35V
Current - Continuous Drain (Id) @ 25°C 7A, 5A Rds On (Max) @ Id, Vgs 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 15V Power - Max 900mW
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC
Base Product Number FDS89

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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