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FDS86242

FDS86242 stands out as an N-channel PowerTrench® MOSFET, delivering robust performance with its 150V voltage rating, 4

Quantity Unit Price(USD) Ext. Price
1 $0.503 $0.50
10 $0.437 $4.37
30 $0.404 $12.12
100 $0.372 $37.20
500 $0.351 $175.50
1000 $0.341 $341.00

Inventory:6,335

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for FDS86242 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of FDS86242

With a focus on maximizing efficiency and reliability, the FDS86242 N-Channel MOSFET boasts a state-of-the-art Power Trench® process. This process has been fine-tuned to deliver exceptional switching performance while maintaining a low on-state resistance (rDS(on)). The result is a robust and efficient MOSFET that is well-suited for demanding power electronics applications

Key Features

  • Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
  • Max rDS(on) = 98mΩ at VGS = 6 V, ID = 3.3 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely usedsurface mount package
  • 100% UIL Tested
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Off-line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 20 A Rds On - Drain-Source Resistance 56.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 4.9 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 5 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS86242 Brand onsemi / Fairchild
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 11 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Type N-Channel Power Trench MOSFET Typical Turn-Off Delay Time 23 ns
Typical Turn-On Delay Time 16 ns Width 3.9 mm
Unit Weight 0.004586 oz

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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