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FDMS86310

N-Channel PowerTrench MOSFET

Inventory:5,724

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Overview of FDMS86310

The FDMS86310 is a top-of-the-line N-Channel MOSFET engineered to enhance efficiency and reduce switch node ringing in DC/DC converters. Whether used with synchronous or conventional switching PWM controllers, this MOSFET is optimized for superior performance. With its low gate charge, minimal rDS(on), rapid switching speed, and impressive body diode reverse recovery performance, the FDMS86310 stands out as a reliable and effective component for power management applications

Key Features

  • Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
  • Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Application

  • DC-DC Merchant Power Supply

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case Power-56-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 80 V Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 6.7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.4 V Qg - Gate Charge 95 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 96 W Channel Mode Enhancement
Tradename PowerTrench Series FDMS86310
Brand onsemi / Fairchild Configuration Single
Height 1.1 mm Length 6 mm
Product Type MOSFET Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 5 mm Unit Weight 0.002402 oz

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Warranty, Returns, and Additional Information

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