FDMS86252
MOSFET 150V N-Channel PowerTrench MOSFET
Inventory:8,480
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Part Number : FDMS86252
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Package/Case : PQFN EP
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDMS86252 DataSheet (PDF)
Overview of FDMS86252
This MOSFET features a threshold voltage of 2.8V and a power dissipation of 69W, ensuring stable operation across a wide temperature range from -55°C to +150°C. With a power 56 case style and 8 pins, it is easy to integrate into existing designs. Additionally, the FDMS86252 is classified as MSL 1 - Unlimited and contains no SVHC, making it compliant with environmental regulations
Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
- Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Application
- This product is general usage and suitable for many different applications.
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | FDMS86252 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 150 V | Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 51mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 75 V |
Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | 8-PQFN (5x6) |
Package / Case | Power-56-8 | Base Product Number | FDMS86 |
Manufacturer | onsemi | Product Category | MOSFET |
RoHS | Details | REACH | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 150 V |
Id - Continuous Drain Current | 16 A | Rds On - Drain-Source Resistance | 51 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.8 V |
Qg - Gate Charge | 6.1 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 69 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Brand | onsemi / Fairchild | Configuration | Single |
Forward Transconductance - Min | 15 S | Height | 1.1 mm |
Length | 6 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 5 mm |
Unit Weight | 0.002610 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
Returns for Exchange: within 90 days
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