FDMC89521L
MOSFET 60V Dual N-Channel Power Trench MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.045 | $1.04 |
10 | $1.022 | $10.22 |
30 | $1.008 | $30.24 |
100 | $0.992 | $99.20 |
Inventory:6,894
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : FDMC89521L
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Package/Case : WDFN EP
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Brands : onsemi
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Components Categories : FET, MOSFET Arrays
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Datesheet : FDMC89521L DataSheet (PDF)
Overview of FDMC89521L
The innovative FDMC89521L houses two 60 V N-Channel MOSFETs within a dual Power 33 package, meticulously crafted to deliver unparalleled thermal capabilities. Measuring at 3 mm X 3 mm MLP, this compact package is optimized for efficient heat dissipation, ensuring the reliable operation of the device even in challenging conditions. With a focus on thermal performance, this product is engineered to meet the rigorous demands of modern applications
Key Features
- Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A
- Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6.7 A
- Termination is Lead-free
- RoHS Compliant
Application
- Consumer
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | FDMC89521L | Product Status | Active |
Technology | Si | Configuration | Dual |
FET Feature | Logic Level Gate | Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) | Rds On (Max) @ Id, Vgs | 17mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1635pF @ 30V | Power - Max | 1.9W (Ta), 16W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | Power-33-8 | Supplier Device Package | 8-Power33 (3x3) |
Base Product Number | FDMC89521 | Manufacturer | onsemi |
Product Category | MOSFET | RoHS | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 8.2 A | Rds On - Drain-Source Resistance | 17 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 24 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.9 W |
Channel Mode | Enhancement | Tradename | PowerTrench |
Brand | onsemi / Fairchild | Height | 0.8 mm |
Length | 3 mm | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Width | 3 mm |
Unit Weight | 0.006914 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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