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FDMC0310AS-F127

Trans MOSFET N-CH 30V 19A 8-Pin WDFN EP T/R

Inventory:8,570

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Overview of FDMC0310AS-F127

The FDMC0310AS-F127 is carefully engineered to address the challenges of power conversion. Through a combination of silicon and package technologies, this device achieves remarkable efficiencies, offering the lowest rDS(on) and exceptional switching performance. Its efficient monolithic schottky body diode serves as a valuable feature, enhancing its overall effectiveness in power conversion applications

Key Features

  • Max. RDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A
  • Max. RDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A
  • Advanced package and silicon combination for low rDS(on) and high efficiency
  • SyncFET™ Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

Application

  • Notebook PC

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case Power-33-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 76 A
Rds On - Drain-Source Resistance 4.5 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.6 V Qg - Gate Charge 37 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 36 W Brand onsemi / Fairchild
Configuration Single Fall Time 4 ns
Forward Transconductance - Min 106 S Height 0.8 mm
Length 3.3 mm Product Type MOSFET
Rise Time 5 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 11 ns
Width 3.3 mm Part # Aliases FDMC0310AS_F127
Unit Weight 0.010582 oz

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