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FDG8850NZ

Trans MOSFET N-CH 30V 0.75A 6-Pin SC-70 T/R

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Overview of FDG8850NZ

Meet the FDG8850NZ, a dual N-Channel logic level enhancement mode field effect transistor that's set to revolutionize your electronic projects. Crafted using Fairchild's advanced DMOS technology, this transistor offers unparalleled performance and efficiency. Specifically designed for low voltage applications, the FDG8850NZ excels at minimizing on-state resistance, making it the perfect replacement for bipolar digital transistors and small signal MOSFETs. By eliminating the need for bias resistors, this dual digital FET streamlines circuit design and simplifies component selection. Whether you're a professional electronics engineer or an enthusiastic hobbyist, the FDG8850NZ is a reliable and versatile choice that will take your projects to new heights. Experience the power of innovation with the FDG8850NZ

Key Features

  • Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A
  • Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A
  • Very low level gate drive requirements allowing operationin 3V circuits(VGS(th) <1.5V)
  • Very small package outline SC70-6
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series FDG8850NZ Product Status Active
Technology Si Configuration Dual
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 750mA Rds On (Max) @ Id, Vgs 400mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 10V Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Package / Case SOT-323-6 Supplier Device Package SC-88 (SC-70-6)
Base Product Number FDG8850 Manufacturer onsemi
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 750 mA Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 1.44 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Fall Time 1 ns
Height 1.1 mm Length 2 mm
Product MOSFET Small Signals Product Type MOSFET
Rise Time 1 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 9 ns Typical Turn-On Delay Time 4 ns
Width 1.25 mm Unit Weight 0.000988 oz

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