FDC6303N

Upgrade your electronic circuit designs with the FDC6303N, a dual N-Channel logic level enhancement mode field effect transistor that combines innovation and efficiency. Manufactured using a proprietary high cell density DMOS technology, this transistor sets itself apart with its minimized on-state resistance, making it perfect for low voltage applications. By eliminating the need for bias resistors, the FDC6303N simplifies circuit design and reduces component requirements, offering a cost-effective solution for load switching applications. Say goodbye to complex circuit layouts and hello to streamlined efficiency with the FDC6303N

Key Features

• 25 V, 0.68 A continuous, 2 A Peak
• R_DS(ON) = 0.6 Ω @ V_GS = 2.7 V
• R_DS(ON) = 0.45 Ω @ V_GS= 4.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5 V
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
• Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET

Application

• This product is general usage and suitable for many different applications.