FDB1D7N10CL7
pak 7-pin shielded gate n-channel 100v 268a powertrench mosfet
Inventory:2,282
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Part Number : FDB1D7N10CL7
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Package/Case : TO-263-7
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Brands : Onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FDB1D7N10CL7 DataSheet (PDF)
Overview of FDB1D7N10CL7
Elevate your electronic designs with the N-Channel MV MOSFET FDB1D7N10CL7 from ON Semiconductor. Engineered using the latest Power Trench process and Shielded Gate technology, this MOSFET delivers exceptional performance in a compact form factor. With its best-in-class soft body diode, this component offers superior efficiency and reliability for a wide range of applications. Experience the future of power management with ON Semiconductor's innovative MOSFET technology
Key Features
- Part Number: FDB1D7N10CL7
- Package Type: D2PAK
- Drain-Source Voltage: 100V
- Drain Current: 75A
- Rds(on): 1.7 mOhm
- Low Gate Charge
- Fast Switching
Application
- Electric vehicle charging systems
- Uninterruptible power supplies (UPS)
- Renewable energy systems
- Industrial motor control systems
- Solar inverters
- Power factor correction systems
- Welding power supplies
- Battery management systems
- Power supplies for consumer electronics
- Power supplies for medical devices
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-263-7 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 268 A | Rds On - Drain-Source Resistance | 1.7 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 163 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 250 W |
Channel Mode | Enhancement | Series | FDB1D7N10CL7 |
Brand | onsemi | Configuration | Single |
Fall Time | 36 ns | Forward Transconductance - Min | 237 S |
Product Type | MOSFET | Rise Time | 33 ns |
Factory Pack Quantity | 800 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 85 ns |
Typical Turn-On Delay Time | 39 ns | Unit Weight | 0.056438 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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