DMP10H4D2S-7
MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.085 | $0.42 |
50 | $0.068 | $3.40 |
150 | $0.059 | $8.85 |
500 | $0.054 | $27.00 |
3000 | $0.047 | $141.00 |
6000 | $0.044 | $264.00 |
Inventory:7,162
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Part Number : DMP10H4D2S-7
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMP10H4D2S-7 DataSheet (PDF)
The DMP10H4D2S-7 is a high-voltage N-channel MOSFET transistor designed for power management applications. This MOSFET features a drain-source voltage of 100V and a continuous drain current of 10A, making it suitable for various power switching and amplification tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMP10H4D2S-7 MOSFET for a better understanding of its usage. Note: For detailed technical specifications, please refer to the DMP10H4D2S-7 datasheet. Functionality The DMP10H4D2S-7 MOSFET is designed to control and amplify high-power signals with its high voltage and current handling capabilities. It serves as a reliable and efficient component in power management and amplification systems. Usage Guide Q: What is the maximum drain-source voltage of the DMP10H4D2S-7? Q: Can the DMP10H4D2S-7 be used in high-power amplifier circuits? For similar functionalities, consider these alternatives to the DMP10H4D2S-7:Overview of DMP10H4D2S-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The DMP10H4D2S-7 can handle a maximum drain-source voltage of 100V.
A: Yes, the DMP10H4D2S-7 is suitable for high-power amplification applications due to its 10A continuous drain current rating.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 270 mA | Rds On - Drain-Source Resistance | 4.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 1 V |
Qg - Gate Charge | 1.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 440 mW |
Channel Mode | Enhancement | Series | DMP10 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 4.9 ns | Height | 0.975 mm |
Length | 2.9 mm | Product Type | MOSFET |
Rise Time | 2.6 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 8.4 ns | Typical Turn-On Delay Time | 3.3 ns |
Width | 1.3 mm | Unit Weight | 0.000282 oz |
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