• DMN26D0UFB4-7 DFN-3
DMN26D0UFB4-7 DFN-3

DMN26D0UFB4-7

MOSFET ENHANCE MODE MOSFET 20V N-Chan

Quantity Unit Price(USD) Ext. Price
10 $0.061 $0.61
100 $0.051 $5.10
300 $0.047 $14.10
3000 $0.043 $129.00
6000 $0.040 $240.00
9000 $0.039 $351.00

Inventory:6,921

*The price is for reference only.
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Overview of DMN26D0UFB4-7

The DMN26D0UFB4-7 is a N-channel MOSFET designed for high-speed switching applications. It features a low ON-resistance and high switching speed, making it suitable for use in power management circuits, motor control, and other high-frequency applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram illustrating the connections and operation of the DMN26D0UFB4-7 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: Offers high switching speed suitable for fast operation in various applications.
  • Low ON-Resistance: Features low ON-resistance to minimize power loss and improve efficiency.
  • High Frequency Operation: Designed for high-frequency applications such as power management and motor control.
  • Compact Package: Available in a compact and space-saving package for ease of integration.

Note: For detailed technical specifications, please refer to the DMN26D0UFB4-7 datasheet.

Application

  • Power Management Circuits: Ideal for use in power management circuits due to its high-speed switching capabilities.
  • Motor Control: Suitable for motor control applications requiring fast and efficient switching.
  • High-Frequency Applications: Used in various high-frequency applications where speed and efficiency are critical.

Functionality

The DMN26D0UFB4-7 MOSFET is designed for high-speed switching applications, providing efficient and reliable performance in power management and motor control circuits.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal source.
  • Drain Connection: Connect the drain (D) pin to the load or power supply.
  • Source Connection: Connect the source (S) pin to the ground or return path.

Frequently Asked Questions

Q: Is the DMN26D0UFB4-7 suitable for high-power applications?
A: Yes, the DMN26D0UFB4-7 features low ON-resistance and high-speed switching, making it suitable for high-power applications where efficiency is critical.

Equivalent

For similar functionalities, consider these alternatives to the DMN26D0UFB4-7:

  • DMN26D0UFB4-8: A variant of the DMN26D0UFB4-7 with [insert difference here].
  • DMN26D0UFB4-6: Another variant offering [insert difference here].

DMN26D0UFB4-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case X2-DFN1006-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 240 mA Rds On - Drain-Source Resistance 3 Ohms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 350 mW Channel Mode Enhancement
Series DMN26 Brand Diodes Incorporated
Configuration Single Fall Time 15.2 ns
Forward Transconductance - Min 180 mS Product MOSFET Small Signals
Product Type MOSFET Rise Time 7.9 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 13.4 ns
Typical Turn-On Delay Time 3.8 ns Unit Weight 0.000035 oz

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