DMN62D0U-13
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.053 | $0.53 |
100 | $0.047 | $4.70 |
300 | $0.045 | $13.50 |
1000 | $0.043 | $43.00 |
5000 | $0.033 | $165.00 |
10000 | $0.032 | $320.00 |
Inventory:6,065
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Part Number : DMN62D0U-13
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMN62D0U-13 DataSheet (PDF)
The DMN62D0U-13 is a dual N-channel enhancement mode MOSFET designed for power management applications in electronic circuits. This MOSFET features a low on-state resistance and high-speed switching capabilities, making it ideal for high-efficiency power conversion and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN62D0U-13 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMN62D0U-13 datasheet. Functionality The DMN62D0U-13 dual N-channel MOSFET facilitates efficient power management and high-speed switching in electronic circuits. Its low on-state resistance and dual-channel design make it a versatile component for various power applications. Usage Guide Q: Is the DMN62D0U-13 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the DMN62D0U-13:Overview of DMN62D0U-13
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the DMN62D0U-13's high-speed switching capabilities make it suitable for high-frequency applications requiring fast response times.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 380 mA | Rds On - Drain-Source Resistance | 1.2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 500 mV |
Qg - Gate Charge | 500 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 380 mW |
Channel Mode | Enhancement | Series | DMN62D0U |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 12.5 ns | Forward Transconductance - Min | 1.8 mS |
Product Type | MOSFET | Rise Time | 2.5 ns |
Factory Pack Quantity | 10000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 22.6 ns |
Typical Turn-On Delay Time | 2.4 ns | Unit Weight | 0.000282 oz |
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