• DMN601K-7
DMN601K-7

DMN601K-7

Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
20 $0.024 $0.48
200 $0.021 $4.20
600 $0.019 $11.40
3000 $0.018 $54.00
9000 $0.017 $153.00
21000 $0.016 $336.00

Inventory:8,425

*The price is for reference only.
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Overview of DMN601K-7

The DMN601K-7 is a N-channel enhancement mode MOSFET designed for high-speed switching applications.This MOSFET features a low on-state resistance and high-speed switching capability,making it ideal for use in power management circuits and DC-DC converters.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMN601K-7 MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The DMN601K-7 offers fast switching speeds, suitable for applications requiring rapid signal transitions.
  • Low On-State Resistance: With a low RDS(ON) value, this MOSFET minimizes power loss and heat generation during operation.
  • Enhancement Mode: Operating in enhancement mode ensures ease of control and efficient power management in circuits.
  • Low Gate Threshold Voltage: The MOSFET has a low gate threshold voltage, enabling quick and responsive switching actions.
  • Compact Design: The DMN601K-7 is available in a compact and space-saving package, suitable for small electronic designs.

Note: For detailed technical specifications, please refer to the DMN601K-7 datasheet.

Application

  • Power Management: Ideal for use in power management circuits, DC-DC converters, and voltage regulation applications.
  • Motor Control: Suitable for motor control applications requiring high-speed switching and efficient power handling.
  • LED Lighting: Used in LED driver circuits for controlling the brightness of LED lighting systems.

Functionality

The DMN601K-7 MOSFET is a high-speed switching device with low on-state resistance, designed for efficient power management and control in various electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate gate voltage to control the switching action of the MOSFET between the drain and source terminals.
  • Load Connection: Connect the load to the drain terminal and ensure proper current handling capability based on the MOSFET specifications.
  • Heat Dissipation: Consider heat dissipation requirements for high-power applications to maintain optimal MOSFET performance.

Frequently Asked Questions

Q: Can the DMN601K-7 be used in high-frequency applications?
A: Yes, the DMN601K-7 is designed for high-speed switching applications and can be used in high-frequency circuits.

Equivalent

For similar functionalities, consider these alternatives to the DMN601K-7:

  • DMN650K-7: Another N-channel MOSFET with similar characteristics and performance specifications.
  • DMN700K-7: A higher power handling N-channel MOSFET suitable for applications requiring greater current capabilities.

DMN601K-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Diodes Incorporated
Series - Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Feature - Power Dissipation (Max) 350mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN601

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