DMN5L06DWK-7
Diodes Inc DMN5L06DWK-7 Dual N-channel MOSFET Transistor, 0.305 A, 50 V, 6-Pin SOT-363
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
5 | $0.123 | $0.62 |
50 | $0.106 | $5.30 |
150 | $0.099 | $14.85 |
500 | $0.090 | $45.00 |
3000 | $0.087 | $261.00 |
6000 | $0.084 | $504.00 |
Inventory:5,064
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Part Number : DMN5L06DWK-7
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Package/Case : SOT363-6
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Brands : DIODES
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Components Categories : FETs, MOSFETsFET, MOSFET Arrays
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Datesheet : DMN5L06DWK-7 DataSheet (PDF)
The DMN5L06DWK-7 is a power MOSFET transistor designed for high-performance switching applications.This device features a low on-resistance and high current-handling capability,making it ideal for power management and motor control applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN5L06DWK-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMN5L06DWK-7 datasheet. Functionality The DMN5L06DWK-7 MOSFET transistor is designed to efficiently switch high currents in power management and control applications.Its low on-resistance and high current-handling capability make it a reliable choice for demanding electronic systems. Usage Guide Q: Is the DMN5L06DWK-7 suitable for automotive applications? For similar functionalities, consider these alternatives to the DMN5L06DWK-7:Overview of DMN5L06DWK-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the DMN5L06DWK-7's high temperature tolerance makes it suitable for automotive applications where temperature variations are common.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-363-6 | Transistor Polarity | N-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 50 V |
Id - Continuous Drain Current | 305 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 490 mV |
Qg - Gate Charge | 400 pC | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 250 mW |
Channel Mode | Enhancement | Series | DMN5L06 |
Brand | Diodes Incorporated | Configuration | Dual |
Fall Time | 8.4 ns | Forward Transconductance - Min | 200 mS |
Height | 1 mm | Length | 2.2 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 1.8 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 2 N-Channel |
Typical Turn-Off Delay Time | 14.4 ns | Typical Turn-On Delay Time | 2.1 ns |
Width | 1.35 mm | Unit Weight | 0.000265 oz |
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Warranty, Returns, and Additional Information
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