DMN2300UFB4-7B
DMN2300UFB4-7B N-Channel MOSFET, 1.3 A, 20 V, 3-Pin X2-DFN1006 Diodes Inc
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.046 | $0.46 |
100 | $0.040 | $4.00 |
300 | $0.037 | $11.10 |
1000 | $0.035 | $35.00 |
5000 | $0.033 | $165.00 |
10000 | $0.032 | $320.00 |
Inventory:6,654
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Part Number : DMN2300UFB4-7B
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Package/Case : X2-DFN1006-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMN2300UFB4-7B DataSheet (PDF)
The DMN2300UFB4-7B is a N-Channel MOSFET transistor designed for high-speed switching applications.This MOSFET features low on-state resistance and fast switching speeds,making it suitable for power management and motor control applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMN2300UFB4-7B for a visual representation. Note:For detailed technical specifications,please refer to the DMN2300UFB4-7B datasheet. Functionality The DMN2300UFB4-7B MOSFET transistor is designed for high-speed switching applications,offering low on-state resistance and fast switching speeds.It provides reliable and efficient power management in various electronic systems. Usage Guide Q:Can the DMN2300UFB4-7B be used in high-temperature environments? For similar functionalities,consider these alternatives to the DMN2300UFB4-7B:Overview of DMN2300UFB4-7B
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:Yes,the DMN2300UFB4-7B is designed for enhanced thermal performance and can operate reliably in high-temperature conditions.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Diodes Incorporated | Product Category | FETs - Single |
Series | DMN2300 | Packaging | Alternate Packaging |
Mounting-Style | Si | Package-Case | -55°C ~ 150°C (TJ) |
Technology | Surface Mount | Operating-Temperature | Single |
Mounting-Type | 1 N-Channel | Number-of-Channels | 20V |
Supplier-Device-Package | 64.3pF @ 25V | Configuration | Standard |
FET-Type | 1.3A (Ta) | Power-Max | 1.6nC @ 4.5V |
Transistor-Type | - 55 C | VDSS – Drain-Source Voltage | 13 ns |
Input Capacitance | 1.3 A | FET-Feature | 500 mOhms |
Current-Continuous-Drain-Id-25°C | 3.5 ns | Rds-On-Max-Id-Vgs | Enhancement |
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