DMG2305UX-7
MOSFET P-Ch 20V 5A Enhancement SOT23 Diodes Inc DMG2305UX-7 P-channel MOSFET Transistor, -3.3 A, -20 V, 3-Pin SOT-23
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.045 | $0.45 |
100 | $0.040 | $4.00 |
300 | $0.037 | $11.10 |
3000 | $0.031 | $93.00 |
6000 | $0.029 | $174.00 |
9000 | $0.028 | $252.00 |
Inventory:5,304
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Part Number : DMG2305UX-7
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Package/Case : SOT23-3
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Brands : DIODES
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : DMG2305UX-7 DataSheet (PDF)
The DMG2305UX-7 is an N-channel enhancement mode MOSFET transistor designed for high-speed switching applications in power management circuits. This MOSFET features a low on-resistance and high current capability, making it suitable for various power control tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the DMG2305UX-7 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the DMG2305UX-7 datasheet. Functionality The DMG2305UX-7 MOSFET is designed for high-speed switching applications, providing low on-resistance and high current capability for effective power management in various electronic systems. Usage Guide Q: Is the DMG2305UX-7 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the DMG2305UX-7:Overview of DMG2305UX-7
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the DMG2305UX-7 is designed for high-speed switching applications and can be used in high-frequency circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 20 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 52 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 900 mV |
Qg - Gate Charge | 10.2 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 1.4 W |
Channel Mode | Enhancement | Series | DMG2305 |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 34.7 ns | Product Type | MOSFET |
Rise Time | 13.7 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 79.3 ns | Typical Turn-On Delay Time | 10.8 ns |
Unit Weight | 0.000282 oz |
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