• DMG2302UK-7 SOT23-3
  • DMG2302UK-7
DMG2302UK-7 SOT23-3
DMG2302UK-7

DMG2302UK-7

MOSFET MOSFET BVDSS: 8V-24V

Quantity Unit Price(USD) Ext. Price
10 $0.041 $0.41
100 $0.036 $3.60
300 $0.033 $9.90
3000 $0.031 $93.00
6000 $0.029 $174.00
9000 $0.028 $252.00

Inventory:8,495

*The price is for reference only.
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Overview of DMG2302UK-7

The DMG2302UK-7 is a P-channel enhancement-mode MOSFET transistor designed for various electronic applications. This transistor offers high performance and reliability in a compact package, making it suitable for a wide range of circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the DMG2302UK-7 MOSFET for a visual representation.

Key Features

  • Enhancement-Mode MOSFET: The DMG2302UK-7 is a P-channel enhancement-mode MOSFET, suitable for various switching and amplification applications.
  • High Performance: This MOSFET offers high performance and low on-resistance, ensuring efficient operation in electronic circuits.
  • Compact Package: Available in a compact SOT-23 package, this transistor saves space on PCB layouts.
  • Wide Voltage Range: The DMG2302UK-7 operates within a wide voltage range, making it compatible with a variety of electronic systems.
  • Low Power Consumption: With its low power consumption characteristics, this MOSFET is ideal for battery-powered applications.

Note: For detailed technical specifications, please refer to the DMG2302UK-7 datasheet.

Application

  • Switching Circuits: Ideal for use in switching circuits due to its low on-resistance and high performance.
  • Power Management: Suitable for power management applications in electronic devices.
  • Amplification: Can be used for signal amplification in various electronic circuits.

Functionality

The DMG2302UK-7 is a P-channel enhancement-mode MOSFET transistor that provides reliable switching and amplification capabilities in electronic circuits.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin (G) to control the flow of current between the drain and source.
  • Drain and Source Connections: Connect external components to the drain (D) and source (S) pins as per the circuit requirements.

Frequently Asked Questions

Q: Is the DMG2302UK-7 suitable for high-frequency applications?
A: Yes, this MOSFET is suitable for high-frequency applications due to its fast switching characteristics.

Equivalent

For similar functionalities, consider these alternatives to the DMG2302UK-7:

  • DMG2302U: This is a similar P-channel enhancement-mode MOSFET transistor offering comparable performance characteristics.
  • DMG2302UK-13: Another variant of the DMG2302UK series, providing similar functionality with slight differences in specifications.

DMG2302UK-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.8 A Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 300 mV
Qg - Gate Charge 1.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 660 mW
Channel Mode Enhancement Brand Diodes Incorporated
Configuration Single Fall Time 1.7 ns
Product Type MOSFET Rise Time 2.7 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 4.2 ns
Typical Turn-On Delay Time 0.6 ns Unit Weight 0.000282 oz

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