• DMG1012TQ-7 SOT-523
DMG1012TQ-7 SOT-523

DMG1012TQ-7

N-CHANNEL ENHANCEMENT MODE MOSFET

Quantity Unit Price(USD) Ext. Price
5 $0.070 $0.35
50 $0.057 $2.85
150 $0.050 $7.50
500 $0.044 $22.00
3000 $0.040 $120.00
6000 $0.038 $228.00

Inventory:5,218

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Quick Inquiry

Please submit RFQ for DMG1012TQ-7 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of DMG1012TQ-7

The DMG1012TQ-7 is a high-performance N-channel enhancement-mode MOSFET designed for power management applications. This MOSFET features a low on-resistance and high switching speed, making it ideal for use in various power circuit configurations.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the DMG1012TQ-7 MOSFET for a visual representation.

Key Features

  • Enhancement-Mode MOSFET: The DMG1012TQ-7 is an N-channel enhancement-mode MOSFET offering high performance in power management applications.
  • Low On-Resistance: This MOSFET has a low on-resistance, minimizing power losses and improving efficiency in power circuits.
  • High Switching Speed: With its high-speed switching capability, the DMG1012TQ-7 ensures rapid transitions in power applications.
  • Temperature Stability: Designed for reliable operation across a wide temperature range for consistent performance.
  • High Power Handling: Capable of handling high power levels, suitable for demanding power management tasks.

Note: For detailed technical specifications, please refer to the DMG1012TQ-7 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring efficient and reliable MOSFET performance.
  • Switching Circuits: Suitable for switching circuits in various electronic devices and applications.
  • Voltage Regulation: Used in voltage regulation circuits to control and stabilize voltage levels.

Functionality

The DMG1012TQ-7 N-channel MOSFET provides high-performance power management capabilities with low on-resistance and fast switching speeds. It serves as a crucial component in power circuits for efficient power handling.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to control the conductivity between drain and source.
  • Drain-Source Connection: Connect the load to the drain terminal for power flow control.
  • Source Connection: Ground the source terminal to complete the circuit and provide a return path for current.

Frequently Asked Questions

Q: Can the DMG1012TQ-7 be used in high-frequency applications?
A: Yes, the high switching speed of the DMG1012TQ-7 makes it suitable for high-frequency applications requiring fast transitions.

Equivalent

For similar functionalities, consider these alternatives to the DMG1012TQ-7:

  • DMG1012UX-7: A higher power handling version of the DMG1012TQ-7 for more demanding applications.
  • DMG1012RQ-7: This MOSFET offers similar performance characteristics to the DMG1012TQ-7 with enhanced temperature stability.

DMG1012TQ-7

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-523-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 630 mA Rds On - Drain-Source Resistance 400 mOhms
Vgs - Gate-Source Voltage - 6 V, + 6 V Vgs th - Gate-Source Threshold Voltage 500 mV
Qg - Gate Charge 736.6 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 280 mW
Channel Mode Enhancement Qualification AEC-Q101
Brand Diodes Incorporated Configuration Single
Fall Time 12.3 ns Product Type MOSFET
Rise Time 7.4 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 26.7 ns Typical Turn-On Delay Time 5.1 ns
Unit Weight 0.000071 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

Similar Product

DMP6023LE-13

DMP6023LE-13

DMP6023LE-13 MOSFET transistor from Diodes Inc
DMP3098L-7

DMP3098L-7

098L Series 30 V 70 mOhm P-Channel, SOT-23-3, 30 V 70 mOhm P-Channel
DMC2990UDJ-7

DMC2990UDJ-7

Complem. Pair Enhancement MOSFET SOT-963
DMN2230U-7

DMN2230U-7

Trans MOSFET N-CH 20V 2A 3-Pin SOT-23 T/R
DMN26D0UFB4-7

DMN26D0UFB4-7

MOSFET ENHANCE MODE MOSFET 20V N-Chan
DMN3051L-7

DMN3051L-7

Diodes Inc DMN3051L-7 N-channel MOSFET Transistor, 5.8 A, 30 V, 3-Pin SOT-23
DMN3067LW-7

DMN3067LW-7

MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC
DMP6185SE-13

DMP6185SE-13

Trans MOSFET P-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R