BSZ096N10LS5ATMA1
OptiMOSTM5Power-Transistor,100V
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.341 | $1.34 |
200 | $0.519 | $103.80 |
500 | $0.501 | $250.50 |
1000 | $0.493 | $493.00 |
Inventory:7,702
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Part Number : BSZ096N10LS5ATMA1
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Package/Case : TSDSON-8
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Brands : Infineon Technologies
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Components Categories : Single FETs, MOSFETs
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Datesheet : BSZ096N10LS5ATMA1 DataSheet (PDF)
Overview of BSZ096N10LS5ATMA1
MOSFET, N-CH, 100V, 40A, 150DEG C, 69W; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0082ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 69W; Transistor Case Style: TSDSON-FL; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | OptiMOS 5 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 36µA | Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
FET Feature | Standard | Power Dissipation (Max) | 69W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8-FL | Package / Case | TSDSON-8 |
Base Product Number | BSZ096 | Manufacturer | Infineon |
Product Category | MOSFET | RoHS | Details |
REACH | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 40 A |
Rds On - Drain-Source Resistance | 9.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.7 V | Qg - Gate Charge | 22 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 69 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Brand | Infineon Technologies |
Configuration | Single | Development Kit | EVAL_1K4W_ZVS_FB_CFD7 |
Fall Time | 5.3 ns | Forward Transconductance - Min | 22 S |
Height | 1.1 mm | Length | 3.3 mm |
Product Type | MOSFET | Rise Time | 4.6 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 5.7 ns | Width | 3.3 mm |
Part # Aliases | BSZ096N10LS5 SP001352994 | Unit Weight | 0.001367 oz |
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