BSP613PH6327XTSA1

The BSP613PH6327XTSA1 is a highly efficient RF power transistor designed for high power applications in the UHF band. This LDMOS transistor operates within a frequency range of 470-700 MHz and is capable of delivering a peak output power of up to 55 watts. It is specifically designed for use in wireless infrastructure applications such as base stations and small cell networks.Key features of the BSP613PH6327XTSA1 include a high power gain of 17 dB, excellent linearity, and high efficiency, making it well-suited for high power amplification requirements. The device also offers industry-leading ruggedness and reliability, ensuring long-term performance in demanding operating conditions.The BSP613PH6327XTSA1 is housed in a compact, thermally enhanced package for efficient heat dissipation and easy integration into RF power amplifier designs. It operates at a supply voltage of 28 V and can withstand a maximum input power of 30 dBm, making it suitable for a wide range of high power RF applications.

Key Features

• Part Number: BSP613PH6327XTSA1
• Manufacturer: Infineon Technologies
• Transistor Polarity: NPN
• Collector- Emitter Voltage: 20V
• Continuous Collector Current: 500mA
• Total Power Dissipation: 330mW
• Package: SOT-23

Application

• Automotive industry for engine control units and airbag systems
• Industrial automation for motor control and power supplies
• Consumer electronics for battery management and power controls
• Medical devices for patient monitoring systems and diagnostic equipment
• Telecommunication equipment for power management and signal processing