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BSZ063N04LS6ATMA1

MOSFET TRENCH <= 40V

Inventory:6,001

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Overview of BSZ063N04LS6ATMA1

The BSZ063N04LS6ATMA1 power MOSFET from Infineon Technologies is a top-of-the-line solution for high power applications. With a 40V drain-source voltage rating and a hefty 63A continuous drain current, this MOSFET can handle heavy loads with ease. Its low on-resistance of 4mΩ ensures efficient power transfer and minimal power loss, making it an excellent choice for energy-conscious designs. The high pulsed drain current capability of 252A further solidifies its position as a reliable component for demanding scenarios

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TSDSON-FL-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 40 A
Rds On - Drain-Source Resistance 7 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V Qg - Gate Charge 9.5 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 38 W Channel Mode Enhancement
Tradename OptiMOS Series BSZ0xx
Brand Infineon Technologies Configuration Single
Fall Time 2 ns Forward Transconductance - Min 64 S
Product Type MOSFET Rise Time 1 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 3 ns Part # Aliases BSZ063N04LS6 SP001687058
Unit Weight 0.001367 oz

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