2SC5354-1(F)

Name: 2SC5354-1(F)
Brand: Toshiba
Rating: 4.5 (10 reviews)

Trans GP BJT NPN 800V 5A 100000mW 3-Pin(3+Tab) TO-3PN Sack

Inventory:6,764

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The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	Toshiba	Product Category	Bipolar Transistors - BJT
RoHS	Details	Mounting Style	Through Hole
Package / Case	TO-3P-N-3	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	800 V
Collector- Base Voltage VCBO	900 V	Emitter- Base Voltage VEBO	7 V
Collector-Emitter Saturation Voltage	1 V	Maximum DC Collector Current	5 A
Pd - Power Dissipation	100 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	-	Maximum Operating Temperature	+ 150 C
Series	2SC5354	Brand	Toshiba
Continuous Collector Current	5 A	DC Collector/Base Gain hfe Min	15
DC Current Gain hFE Max	60	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	50	Subcategory	Transistors
Technology	Si	Unit Weight	0.194007 oz

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Parts Quality Guarantee: 365 days

Returns for refund: within 90 days

Returns for Exchange: within 90 days
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