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2SA2061

Bipolar Transistors - BJT

Inventory:7,317

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Overview of 2SA2061

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications• High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max) • High-speed switching: tf = 40 ns (typ.)

TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SA2061 Pbfree Code No
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code
ECCN Code EAR99 Collector Current-Max (IC) 2.5 A
Collector-Emitter Voltage-Max 20 V Configuration SINGLE
DC Current Gain-Min (hFE) 100 JESD-30 Code R-PDSO-G3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 1 W Qualification Status Not Qualified
Surface Mount YES Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING Transistor Element Material SILICON
Manufacturer Toshiba Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Package / Case 2-3S1C-3
Transistor Polarity PNP Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 20 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 1.1 V Maximum DC Collector Current 4 A
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2SA Brand Toshiba
Continuous Collector Current - 2.5 A DC Collector/Base Gain hfe Min 200
DC Current Gain hFE Max 500 Product Type BJTs - Bipolar Transistors
Subcategory Transistors

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