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2SA2059

Bipolar Transistors - BJT

Inventory:5,473

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Overview of 2SA2059

High-Speed Switching ApplicationsDC-DC Converter ApplicationsStrobe Applications• High DC current gain: hFE = 200 to 500 (IC = −0.5 A)• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)• High-speed switching: tf = 40 ns (typ.)

Application

SWITCHING
TOSHIBA Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid 2SA2059 Pbfree Code No
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer TOSHIBA CORP Part Package Code SC-62
Package Description SMALL OUTLINE, R-PSSO-F3 Pin Count 3
Reach Compliance Code ECCN Code EAR99
Samacsys Manufacturer Toshiba Case Connection COLLECTOR
Collector Current-Max (IC) 3 A Collector-Emitter Voltage-Max 20 V
Configuration SINGLE DC Current Gain-Min (hFE) 100
JESD-30 Code R-PSSO-F3 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form FLAT Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON Product Category Bipolar Transistors - BJT
Mounting Style SMD/SMT Package / Case SC-62-3
Transistor Polarity PNP Collector- Emitter Voltage VCEO Max 20 V
Collector- Base Voltage VCBO 20 V Emitter- Base Voltage VEBO 7 V
Collector-Emitter Saturation Voltage 190 mV Maximum DC Collector Current 5 A
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2SA Brand Toshiba
Continuous Collector Current - 3 A DC Collector/Base Gain hfe Min 200
DC Current Gain hFE Max 500 Product Type BJTs - Bipolar Transistors
Subcategory Transistors

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